Dresden 2026 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 67: 2D Materials beyond graphene: Growth, structure and substrate interaction – Poster (joint session O/TT)
TT 67.1: Poster
Mittwoch, 11. März 2026, 18:00–20:00, P2
In-Situ CVD growth of vertical Heterostructures of Borophene and Hexagonal Boron Nitride — •Niels Ganser1, Marko Kriegel1, Smruti Ranjan Mohanty1, Karim Omambac1, Marin Petrovic2, Christian Brand1, Steffen Franzka3, Birk Finke1, Tobias Hartl4, Thomas Michely4, Frank-Joachim Meyer zu Heringdorf1,3, and Michael Horn-von Hoegen1 — 1Universität Duisburg-Essen — 2Institute of Physics, Zagreb — 3ICAN, Duisburg — 4Universität zu Köln
Intrinsic segregation provides a promising and scalable route for the in situ fabrication of 2D heterostructures. Using UHV chemical vapor deposition (CVD) of a single borazine (B3N3H6) precursor [1], we demonstrate the growth of an hBN/borophene heterostructure on Ir(111). At high temperatures and low precursor pressures, boron dissolves into the Ir subsurface region, creating a boron reservoir below the surface [2]. Largely increasing the precursor dosing pressure shifts the chemical potential toward the formation of a complete hBN layer. Upon cooldown, the decreasing boron solubility of the Ir substrate drives segregation to the surface, where a borophene layer forms underneath the hBN overlayer and thus completing the heterostructure. The resulting structure and its growth kinetics were investigated using a combined low energy electron diffraction (SPA-LEED) and microscopy (LEEM) approach.
[1] K. Omambac et al., ACS Nano 17 (2023) 17946
[2] K. Omambac et al., ACS Nano 15 (2021) 7421
Keywords: heterostructures; hexaognal boron nitride; borophene