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TT: Fachverband Tiefe Temperaturen

TT 74: Topological Insulators

TT 74.3: Vortrag

Donnerstag, 12. März 2026, 10:00–10:15, CHE/0091

Growth and quantum transport analysis of high mobility Bi₂Te₃ thin films — •Jonas Buchhorn^1,2, Abdur Rehman Jalil^1,3, Detlev Grützmacher^1,2, and Thomas Schäpers^1,2 — ¹Peter-Grünberg-Institut (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany — ²JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance, Forschungszentrum Jülich and RWTH Aachen University, 52425 Jülich, Germany — ³Institute of Experimental Physics III, Würzburg University, 97070 Würzburg, Germany

To improve future hybrid devices, underlying material properties and conduction mechanisms must be understood and controlled. In this work, we use quantum mechanical and classical models to describe the measured conductivity tensor of Bi₂Te₃ thin films. The crystals have been prepared by molecular beam epitaxy on sapphire substrates and were shaped into Hall bar structures by optical lithography and Ar-etching. At cryogenic temperatures non-linear Hall resistance and Shubnikov-de Haas oscillations were observed. A multi-channel model motivated from band structure calculations is used to extract classical carrier properties. Model residues are quantitatively analyzed to include electron-electron interaction, spin-orbit-effects and quantum oscillations of surface states. Considering these insights, we attempt to disentangle the complex conduction mechanisms of bulk and surface states of topological insulators. The proposed methods should also be applicable to the state-of-the-art ternary or quaternary compounds to identify remaining bulk-contributions.

Keywords: topological insulator; magneto transport; quantum transport; molecular beam epitaxy