Dresden 2026 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
TT: Fachverband Tiefe Temperaturen
TT 83: Topology: Quantum Hall Systems
TT 83.2: Vortrag
Donnerstag, 12. März 2026, 15:15–15:30, HSZ/0105
Topological signatures in the electrostatics of Chern junctions — •Robin Durand1,2, Pascal Simon1, and Ion Garate2 — 1Laboratoire de Physique des Solides, Université Paris-Saclay, CNRS, Orsay 91405, France — 2Département de physique, Institut quantique and Regroupement Québécois sur les Matériaux de Pointe, Université de Sherbrooke, Sherbrooke, Québec J1K 2R1, Canada
Electrostatic control in topological materials is a key challenge for next-generation electronic and quantum devices. We investigate how topological properties, especially Berry curvature and Chern number, reshape electrostatic equilibrium in Chern-insulator junctions under magnetic field. We show that Berry curvature corrections to the modified Landau quantization significantly modify both the built-in potential and the intrinsic chemical-potential profile at the junction.
Using a Landau-level framework combined with a semiclassical expansion, we derive an analytical expression revealing that the built-in potential becomes directly governed by spectral asymmetry, and therefore by the Chern number on each side. Large-scale tight-binding simulations of the half-BHZ model validate this prediction quantitatively.
Our results show that topological properties can directly influence electrostatic profiles in Chern junctions. By linking the built-in potential to spectral asymmetry and Chern number, we reveal how Berry curvature affects charge redistribution and electrostatic equilibrium at topological interfaces.
Keywords: Topological materials; Interface electrostatics; Chern junctions; Quantum Hall devices; Charge redistribution