Dresden 2026 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 88: Spin Transport and Orbitronics, Spin-Hall Effects II (joint session MA/TT)
TT 88.3: Vortrag
Donnerstag, 12. März 2026, 15:30–15:45, POT/0361
Current-induced spin and orbital polarization in the ferroelectric Rashba semiconductor GeTe — •Sergio Leiva-Montecinos1, Libor Vojácek2, Jing Li2, Mairbek Chshiev2, Laurent Vila2, Ingrid Mertig1, and Annika Johansson3 — 1Martin-Luther-Universität Halle-Wittenberg, Germany — 2Univ. Grenoble Alpes, CEA, CNRS, Grenoble, France — 3Max Planck Institute of Microstructure Physics, Halle (Saale), Germany
The Edelstein effect is a promising mechanism for generating spin and orbital polarization from charge currents in systems without inversion symmetry. In ferroelectric materials, such as Germanium Telluride (GeTe), the combination of bulk Rashba splitting and voltage-controlled ferroelectric polarization provides a pathway for electrical control of the sign of the charge-spin conversion [1, 2].
In this work [3], we investigate current-induced spin and orbital magnetization in bulk GeTe using Wannier-based tight-binding models derived from ab initio calculations and semiclassical Boltzmann theory. Employing the modern theory of orbital magnetization, we demonstrate that the orbital Edelstein effect surpases its spin counterpart by one order of magnitude. Moreover, the orbital Edelstein effect remains largely unaffected in the absence of spin-orbit coupling, highlighting its distinct physical origin compared to the spin Edelstein effect.
[1] D. Di Sante et al., Adv. Mater. 25, 509 (2012).
[2] C. Rinaldi et al., Nano Lett. 18, 2751 (2018).
[3] S. Leiva-Montecinos et al., arXiv:2505.21340 (2025).
Keywords: Edelstein effect; Orbitronics; Ferroelectric; Germanium Telluride