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TT: Fachverband Tiefe Temperaturen

TT 93: Superconductivity – Poster II

TT 93.14: Poster

Thursday, March 12, 2026, 18:00–20:00, P4

nematic fluctuations and electronic correlations in heavily hole-doped Ba1−xKxFe2As2 probed by Elastoresistance — •Franz Eckelt1, Xiaochen Hong1,2, Steffen Sykora3, Vilmos Kocsis3, Vadim Grinenko4, Kunihiro Kihou5, Chul-Ho Lee5, Bernd Büchner3, and Christian Hess11University of Wuppertal, School of Mathematics and Natural Sciences, 42097 Wuppertal, Germany — 2Department of Applied Physics and Center of Quantum Materials and Devices, Chongqing University, 401331 Chongqing, China — 3Leibniz-Institute for Solid State and Materials Research, 01069 Dresden, Germany — 4Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 201210, China — 5National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan

We measure the elastoresistance of Ba1−xKxFe2As2 in the strongly hole-doped regime using longitudinal and transverse configurations. The subsequent symmetry decomposition of the elastoresistance reveals a crossover from dominant nematic fluctuations in the B2g channel at low doping to a correlation-driven A1g contribution that becomes visible for x > 0.7. Complementary multi-orbital model calculations reproduce this doping evolution and indicate that strengthened electronic correlations in the dxy orbital govern the observed A1g response in the heavily hole-doped regime.

Keywords: nematic fluctuations; Elastoresistance; Electronic correlations

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