Dresden 2026 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 93: Superconductivity – Poster II

TT 93.2: Poster

Donnerstag, 12. März 2026, 18:00–20:00, P4

MBE Growth and STM/STS Characterization of Monolayer and Bilayer Sb on NbSe₂ — •Zihao Ma, Ruijun Xi, and Hao Zheng — Shanghai Jiao Tong Univ, Tsung Dao Lee Inst, Key Lab Artificial Struct & Quantum Control, Sch Phys & Astron, Shanghai 200240, Peoples R China

Two dimensional antimony (Sb) has attracted increasing interest due to its strong spin-orbit coupling, unprecedented level of structural tunability, and potential topological phases. The atomically flat surface, weak interlayer bonding, and superconducting ground state of NbSe₂ make it an ideal substrate for epitaxial growth of Sb. Studying Sb/NbSe van der Waals heterostructures enables investigation of growth behavior, electronic reconstruction, and possible interface driven phenomena. Furthermore, the combination may be a new strategy to achieve topological superconductors. By molecular beam epitaxy (MBE), we achieve controlled growth of monolayer (1L) and bilayer (2L) Sb on NbSe₂. By STM/STS, we characterize surface morphology, atomic structure, and electronic states.

Keywords: MBE; STM/STS; heterostructure; antimony(Sb); NbSe₂