Dresden 2026 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 96: 2D Materials: Stacking and heterostructures (joint session O/HL/TT)
TT 96.11: Vortrag
Freitag, 13. März 2026, 12:00–12:15, HSZ/0401
MicroARPES studies of contact doping of monolayer transition metal dichalcogenides by RuCl3 — •Thomas Nielsen1, Edvard Solbrekken1, Alfred J. H. Jones1, Zhihao Zhiang1, Chakradar Sahoo1, Kenji Watanabe2, Takashi Taniguchi2, Jill A. Miwa1, Søren Ulstrup1, Christian Overby1, and Christian V-B. Fokdal1 — 1Aarhus University, Denmark — 2National Institute for Materials Science, Japan
Placing van der Waals materials into contact with α-RuCl3 has recently emerged as a method of modulating their electronic structures. The proximity to α-RuCl3 has been observed to produce strong hole doping in the van der Waals material, and this has been established as a method to create better electrical contacts in transistor devices based on monolayer transition metal dichalcogenides (TMDs). Here, we use the microARPES endstation at the ASTRID2 synchrotron light source at Aarhus University in Denmark to study the valence bands and core levels of semiconducting monolayer TMDs in proximity to α-RuCl3. We observe a large valence-band shift of 0.7−0.8 eV indicating strong hole doping. α-RuCl3 is highly sensitive to the temperatures and chemicals typically used in the dry-transfer fabrication procedures of van der Waals heterostructures. How the degradation of α-RuCl3 affects the proximity-induced doping of the TMD is discussed based on the ARPES measurements.
Keywords: microARPES; RuCl3; TMD; Heterostructure; Doping