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P: Fachverband Plasmaphysik

P 8: Low Pressure Plasmas II

P 8.3: Vortrag

Dienstag, 17. März 2026, 17:10–17:25, KH 01.020

Plasma Sheath Tailoring for Advanced 3d Plasma Etching: Emission, Excitation and Etching Properties of a CCP Discharge — •Niklas Eichstaedt, Elia Jüngling, Meret Nürnberg, Marc Böke, and Achim von Keudell — Ruhr University Bochum, Germany

Three-dimensional plasma etching plays a crucial role in the fabrication of microstructures for advanced technological applications. The control and targeted manipulation of the ion density and flux are necessities to create three-dimensional structures. Previously, it has been demonstrated for an Ar/CF₄ plasma that the inclusion of a localized magnetic field leads to asymmetric etching profiles with dependencies on various factors, including the applied bias voltage. This has been attributed to ExB-drift.

However, the exact mechanisms, especially regarding the plasma dynamics, are still unclear. To address this issue, the temporal development and the steady-state shape of an asymmetrical plasma sheath of a capacitively coupled plasma were examined using time-resolved as well as time-integrated optical emission spectroscopy. These sheath geometries, as well as the resulting etching rates and profiles, are compared between different experimental parameters such as the bias voltage, the mask geometries and the material of the surface (Si or SiO₂). Based on those observations, we proposed a model explaining the influence of the observed plasma dynamics on the etching profiles.

Keywords: Etching; Asymmetry; PROES