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T: Fachverband Teilchenphysik
T 30: Silicon Detectors III
T 30.7: Vortrag
Dienstag, 17. März 2026, 17:45–18:00, KH 01.012
Towards ultra-thin hybrid pixel detectors via wafer-to-wafer bonding — Fabian Hügging1, Janna Vischer2, Jens Weingarten2, Matthias Schüssler1, •Maximilian Mucha1, Thomas Fritzsch3, Yannick Dieter1, and Jochen Dingfelder1 — 1Physikalisches Institut, Universität Bonn, Deutschland — 2Technische Universität Dortmund, Deutschland — 3Fraunhofer Institute IZM, Berlin, Deutschland
Hybrid pixel detectors are a key technology for precise particle tracking in high energy physics in high rate and high radiation environments. Conventional hybrid detector assemblies rely on die-level bump bonding techniques, which impose limitations on the achievable detector area and the overall material budget. Wafer-to-wafer bonding provides an alternative by interconnecting sensor and readout wafers prior to dicing, enabling large-area devices and aggressive thinning of the bonded stack, while keeping the advantage of a separate development and optimization of both the sensor and readout wafer. This contribution presents ongoing work towards the realization of ultra-thin hybrid pixel detectors based on wafer-to-wafer bonding. An overview of the project and current progress is given. Particular emphasis is placed on the electrical characterization of silicon sensor wafers prior to bonding. Current-voltage (IV) measurements at wafer level are discussed to evaluate leakage current behavior and breakdown performance. The talk concludes with an outlook on the transition to bonded wafer stacks, including the preparations for wafer-level studies.
Keywords: Silicon Detector; Bonding; Wafer; Detector development; Hybridization