Mainz 2026 – wissenschaftliches Programm
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K: Fachverband Kurzzeit- und angewandte Laserphysik
K 3: THz, EUV and X-Ray Sources and their Application
K 3.4: Vortrag
Montag, 2. März 2026, 18:30–18:45, HS 20
Efficient Terahertz Generation via Two-color Field in Semiconductor — •Han Rao1,2, Yiteng Zhang3, Robin Mevert1,2, Fridolin Jakob Geesmann1, David Zuber1,2, Arun Paudel1,4, Ihar Babushkin1,2,5, and Uwe Morgner1,2 — 1Leibniz University Hannover, Institute of Quantum Optics, Hannover, Germany — 2Cluster of Excellence PhoenixD, Hannover, Germany — 3Leibniz University Hannover, Institute of Solid State Physics, Hannover, Germany — 4Laser Zentrum Hannover, Hannover, Germany — 5Max Born Institute, Berlin, Germany
Efficient and broadband terahertz (THz) sources operating at high repetition rates are essential for advanced spectroscopy and imaging applications. In this work, we demonstrate efficient two-color field-driven THz generation in Al0.4Ga0.6As using a femtosecond laser system operation at a 32.5MHz repetition rate. The 1 micrometer thick AlGaAs emitter achieves comparable THz strength to that of widely used GaP (200 micrometer) crystals under similar excitation conditions. The generated THz radiation exhibits a broad spectrum, with measurable frequency components extending up to 5THz. Moreover, the AlxGa1-xAs material system offers an additional degree of tunability: by varying the aluminum mole fraction x, the bandgap of the material and corresponding nonlinear response can be precisely engineered. This tunability provides a versatile platform for studying phase-controlled injection photocurrents and quantum path interference in solids, thereby enabling systematic exploration of ultrafast carrier dynamics in semiconductor systems.
Keywords: Terahertz radiation; two-color field; ultrafast laser; AlGaAs