Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

Q: Fachverband Quantenoptik und Photonik

Q 29: Poster – Quantum Technologies I

Q 29.32: Poster

Dienstag, 3. März 2026, 17:00–19:00, Philo 2. OG

Characteristics of hBN emitters in different conditions — •Raphael Neubacher, Adam Lafferty, Helmut Hörner, Malaika Waheed, Ambika Shorny, Fritz Steiner, Alex Götz, Adarsh Prasad, Stefan Walser, and Sarah M. Skoff — Atominstitut, TU Wien, Stadionallee 2, 1020 Vienna, Austria

Many quantum technologies rely on the development of stable single photon emitters that work under ambient conditions. Hexagonal Boron Nitride (hBN) is a 2D wide bandgap semiconductor which hosts various atomic scale defects that act as optically active centres. Some of these defect states result in bright, stable and spectrally distinct emission of single photons under ambient conditions. The type of the obtained defects is influenced by several factors, such as manufacturing technique, annealing in different gases or suspension in different liquids. Here, we investigate the characteristics of different hBN emitters in different sample types and under different conditions and aim to narrow down the origin of the most common defect types that emit single photons in the visible range.

Keywords: hBN; 2D materials; single photon source; defect types