Mainz 2026 – wissenschaftliches Programm
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Q: Fachverband Quantenoptik und Photonik
Q 32: Photonics and Biophotonics II
Q 32.2: Vortrag
Mittwoch, 4. März 2026, 14:45–15:00, P 3
Si-Te Ring-Resonator Photodetector for the Telecom Band — •Guillermo Godoy1,2, Saif Shaikh1,2, Alessandro Puddu1,2, Ahmad Echresh1, Kambiz Jamshidi2, Shengqiang Zhou1, and Yonder Berencén1 — 1Helmholtz Zentrum Dresden Rossendorf, Dresden, Germany — 2Dresden University of Technology (TU Dresden), Dresden, Germany
Silicon is a widely used material in photonics, particularly for passive photonic elements, but its indirect bandgap (~1100 nm) limits its use as an active material in the telecom bands. Integration with materials like Ge or InGaAs is typically required for lasers and detectors at telecom wavelengths, increasing fabrication complexity and cost. Tellurium incorporation into Si has recently shown promise for extending silicon's optical response into the near-infrared, covering the telecommunication range (~1260-1625 nm). By introducing deep-level states within the Si bandgap, Si-Te enables absorption of sub-bandgap infrared photons, achieving performance comparable to state-of-the-art heterogeneous devices while maintaining CMOS compatibility and enabling monolithic integration. In this work, we implement Si-Te technology in a microring resonator (MRR) to realize a resonant-enhanced photodetector. This approach is expected to significantly enhance Si-Te sub-bandgap absorption through resonant field amplification, enabling narrowband, spectrally tunable detection in the telecom range. It demonstrates a CMOS-compatible route toward compact infrared photodetectors, paving the way for scalable silicon photonic circuits for optical communication and sensing.
Keywords: Silicon photonics; Tellurium; IR Photodetection; Microring resonator; Telecom wavelenghts