Mainz 2026 – wissenschaftliches Programm
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Q: Fachverband Quantenoptik und Photonik
Q 48: QuanTour IV – Building Blocks
Q 48.3: Vortrag
Donnerstag, 5. März 2026, 11:45–12:00, P 7
AlGaAs nanowires as a universal platform for GaAs, InGaAs, and InAs quantum dots — •Rohan Radhakrishnan1, Rodion Reznik2, Gilles Patriarche3, George Cirlin2, and Nika Akopian1 — 1DTU Department of Electrical and Photonics Engineering, Technical University of Denmark, 2800 Kongens Lyngby, Denmark — 2St. Petersburg, Russia — 3Centre de Nanosciences et Nanotechnologies, Université Paris Saclay, CNRS, 91120 Palaiseau, France
Optical quantum dots are at the core of quantum communication and quantum photonic technologies, requiring precise control over emission wavelengths spanning from 780 nm to 1.55 μm. However, no existing host material enables the full compositional tuning needed to cover the range from GaAs through InGaAs to InAs quantum dots. Here, we demonstrate that embedding InGaAs quantum dots in AlGaAs nanowires provides a universal platform capable of spanning this entire spectral range. By growing 2 s and 5 s long sections of InGaAs, we form quantum dots emitting at 780 nm and 920 nm, respectively, showcasing control of emission wavelength via growth parameters. Unlike previous systems, our approach offers continuous compositional control without compromising optical quality, establishing AlGaAs nanowires as a versatile host for scalable, high-performance quantum light sources.
Keywords: Nanowire; Quantum dots; InGaAs/AlGaAs; VLS growth