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Q: Fachverband Quantenoptik und Photonik

Q 58: Quantum Technologies – Color Centers I

Q 58.4: Vortrag

Donnerstag, 5. März 2026, 15:15–15:30, P 5

Engineering New Family of Chlorine-Based Emitters in Silicon Carbide for Telecom Band — •Ashin Varghese Mathews^1,2, Andrei Anisimov¹, Kalliopi Mavridou¹, Ulrich Kentsch¹, Manfred Helm^1,2, and Georgy Astakhov¹ — ¹Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany — ²Technische Universität Dresden, Germany 01069

Efforts to find silicon carbide (SiC) color centers emitting in the telecom O- and C-bands are crucial for quantum communication [1]. While existing defects like Vanadium (V) are promising (O-band emission, coherent control), they require sub-Kelvin temperatures [2]. Theoretical work proposed the chlorine-vacancy (ClV) center as a new, NV-like defect covering 1330nm to 1590nm [3].

This work reports the first experimental observation of ClV centers. Photoluminescence studies show that their emission, spanning the O- and C-bands, is inherently compatible with telecom infrastructure and remains stable up to 30 K. This establishes ClV centers as a highly potential family of SiC defects for scalable quantum technologies [4]. In order to enhance the optical collection efficiency of the ClV, nanopillars are fabricated with different diameters for optimization and the results are presented within this study.

[1] Z. Mu, et al., Adv. Quantum Technol. 4, 2100076 (2021) [2] T. Astner, et al., Quantum Science and Technology 9(3), 035038 (2024) [3] O. Bulancea-Lindvall, et al., Phys. Rev. B 108, 224106 (2023) [4] A. N. Anisimov, et al., arXiv.org, quant-ph, arXiv:2510.25008 [quant-ph] (2025)

Keywords: Chlorine vacancy; Quantum emitters; Telecom band emitters; Color centers