Parts | Days | Selection | Search | Updates | Downloads | Help

Q: Fachverband Quantenoptik und Photonik

Q 73: Quantum Technologies – Solid State Systems

Q 73.2: Talk

Friday, March 6, 2026, 11:30–11:45, P 7

Some defects in silicon-based material – towards integrated silicon photonics — •Philipp Kellner, Bernd Hähnlein, Kevin Lauer, Christian Möller, Kai Kühnlenz, Mario Bähr, and Thomas Ortlepp — CIS Inst. für Mikrosensorik, Konrad-Zuse-Straße 14, 99099 Erfurt

For years Silicon is known as the standard VIS and NIR sensor material, although an indirect semiconductor. It is still a material of choice for optoelectronics, due to known handling and structuring procedures as well as CMOS-compatibility allowing for highly integrated devices. The given presentation will shed light on defect-based light emitter in indium-doped silicon and gallium implanted silicon-nitride, showing generation methods and photoluminescence spectra. Abbe-limited optical microscopy is going to be used for imaging and photostability will be estimated. These experiments will undertake very first steps towards small light sources on silicon chips and in turn integrated silicon photonics.

Keywords: Photoluminescence; Silicon Photonics; Defects in silicon-based material