Mainz 2026 – wissenschaftliches Programm
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Q: Fachverband Quantenoptik und Photonik
Q 80: Quantum Technologies – Color Centers III
Q 80.7: Vortrag
Freitag, 6. März 2026, 16:00–16:15, P 5
Influence of strain on the metastable state dynamics of silicon vacancy centers in 4H Silicon Carbide — •Maximilian Hollendonner1, Fedor Hrunski1, Durga B. R. Dasari2, Maximilian Schober3, Michel Bockstedte3, and Roland Nagy1 — 1Friedrich-Alexander University Erlangen-Nürnberg, Institute of Applied Quantum Technologies (AQuT.), Germany — 23rd Institute of Physics, ZAQuant, IQST, University of Stuttgart, Germany — 3Institute for Theoretical Physics, Johannes Kepler University Linz, Austria
Currently color centers in semiconductors are among the most promising platforms for quantum technology. Especially the negatively charged cubic silicon vacancy center (VSi) in 4H silicon carbide (SiC) stands out due to its exceptional spin and optical properties [1] and can be integrated into semiconductor structures [2]. It is therefore an ideal candidate for quantum memory nodes [3,4]. The VSi can exhibit significant strain when integrated into nanophotonic structures. How this influences spin properties is currently not fully understood. For this reason, we developed pulse sequences which allow the measurement of metastable state transition rates [5]. In my talk I will discuss the changed rates and present the underlying physical mechanisms. [1] R. Nagy et al., Nat Commun 10, 1954 (2019) [2] D. Scheller et al., Phys. Rev. Applied 24, 014036 (2025) [3] S. K. Parthasarathy et al., Phys. Rev. Applied 19, 034026 (2023) [4] R. Nagy et al., Appl. Phys. Lett. 118, 144003 (2021) [5] D. Liu et al., npj Quantum Inf 10, 72 (2024)
Keywords: Silicon Carbide; Silicon Vacancy Center; Strain