Münster 1997 – scientific programme

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DS: Dünne Schichten

DS 24: Ionenimplantation I

DS 24.6: Talk

Thursday, March 20, 1997, 12:15–12:30, H 55

Radiation Damage of Silicon by MeV Ag Implantation — •Z. Zhang, J.K.N. Lindner, and B. Stritzker — Institut f"ur Physik, Universit"at Augsburg, 86135 Augsburg

The radiation damage of Si(111) induced by MeV Ag⁺ implantation has been studied as a function of dose and target temperature. For this purpose, 2 MeV Ag⁺ ions were implanted at target temperatures of 210, 300 and 400 K with doses up to amorphization. Depth profiles of the radiation damage were determined by Optical Reflectivity Depth Profiling (ORDP) and Rutherford Backscattering / Channeling (RBS/C) techniques. Results of both techniques are compared. The damage model of Hecking et al. [1] is applied to describe the dose dependence of damage in the peak of the damage profile. The model parameters, which represent the strength of defect production and defect interaction mechanisms, are compared to those obtained for MeV implantations with lighter ions. The influence of the nuclear stopping power on the mass dependence of individual defect production and defect interaction mechanisms is discussed.

[1] N. Hecking, K.F. Heidemann, and E. te Kaat, Nucl. Instr. and Meth. B15 (1986) 760