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HL: Halbleiterphysik

HL 11: Poster I

HL 11.14: Poster

Montag, 17. März 1997, 15:30–18:30, Z

P-i-n Diodes on CVD Diamond Films — •A.A. Melnikov¹, A.M. Zaitsev², P. Koidl³, W.R. Fahrner², V.S. Varichenko^1,2, and N.M. Penina⁴ — ¹Belarussian State University, HEII Laboratory, Minsk 220050, Belarus — ²FernUniversity Hagen, LGBE, Haldener Str. 182, 58084 Hagen, Germany — ³Fraunhofer Institute, Tullasstrasse 72, 79108 Freiburg, Germany — ⁴Belarussian State University, Department of Semiconductor Physics, Minsk 220050, Belarus

CVD diamond films have been characterised by cathodoluminescence and ESR revealing a relatively low amount of structural defects and nitrogen. P-i-n diodes have been fabricated thereon by boron and lithium ion implantation. The diodes show clear rectifying characteristics up to a temperature of 400^∘C. The voltage of the direct current onset varies from 20 to 120 V depending on the i-gap width (1.5 to 12 microns). The electroluminescence of the diodes is dominated by the A-band at the room temperature. At 400^∘C the A-band is completely depressed and the 575 nm nitrogen related centre is the only feature of the spectrum. The perspectives of high temperature CVD diamond film based light emitting diodes are discussed.