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HL: Halbleiterphysik
HL 22: Poster II
HL 22.55: Poster
Dienstag, 18. März 1997, 15:30–18:30, Z
Self-Organization Processes of 3-D Arrays of (In,Ga)As Quantum Dots Grown by MOCVD — •Alexander O. Kosogov 1,2, F. Heinrichsdorff3, M. Grundmann3, D. Bimberg3, and P. Werner1 — 1MPI für Mikrostrukturphysik, Halle/Saale — 2Ioffe Physical-Technical Institute, St.Petersburg/Russia — 3TU Berlin, Institut für Festkörperphysik
The self-assembly of semiconductor islands offers a way of producing 3-D arrays of quantum dots (QD’s) being of growing interest for both basic studies of quantum confinement and photonic device applications. Electronic properties of QD’s of a size of 10 nm critically depend on the density, size and shape of the islands as well as on the way of strain accommodation in such structures. Dots of the InGaAs system were spontaneously formed on GaAs (001) after deposition of a few monolayers (ML) of (In,Ga)As by MOCVD. The morphology of QD arrays as a function of the growth technique was investigated by transmission electron microscopy (TEM). These results were correlated with photoluminescence (PL) spectra. The PL peak energy of multilayered QD’s depends on both spacer thickness and the number of (In,Ga)As deposition cycles indicating the formation of electronically coupled QD’s.