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HL: Halbleiterphysik
HL 33: Photovoltaik
HL 33.14: Vortrag
Donnerstag, 20. März 1997, 18:45–19:00, H3
PHOTOLUMINESCENCE STUDY OF CuInSe2 THIN FILMS — •Andrew William Ralph Leitch1, Alvin Chowles2, and Jörg Weber3 — 1Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1 70569 Stuttgart — 2Department of Physics, University of Port Elizabeth PO Box 1600 Port Elizabeth South Africa — 3Max-Planck-Institut für Festkörperforschung Heisenbergstr.1 70569 Stuttgart
The ternary compound CuInSe2 is a promising material for photovoltaic applications, because of the suitability of its bandgap as well as its high absorption coefficient. In this presentation, the photoluminescence (PL) response of CuInSe2 thin films are examined and compared with previously reported results for bulk, thin film and epitaxially grown material. The CuInSe2 thin films were prepared by the sequential evaporation of the elemental sources Cu, In and Se onto glass substrates at room temperature. Selenization was achieved by encapsulating the stacked layers in graphite and annealing in nitrogen ambient at 400∘C. The PL spectra of stoichiometric as well as Cu-rich samples of CuInSe2 were characterized by a dominant free-to-bound transition at 0.97 eV. By comparison, samples having In-rich compositions exhibited a broad, intense luminescence band around 0.9 eV. These transitions are related to the intrinsic point defects present in the material. Variable temperature PL and Raman spectroscopy were also performed to assist in the identification of the defect states.