Münster 1997 – scientific programme
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HL: Halbleiterphysik
HL 38: Implantation
HL 38.1: Talk
Friday, March 21, 1997, 11:00–11:15, H2
Low-Temperature Doping of p-Type Czochralski Silicon by Hydrogen Plasma Treatment — •Dietmar Borchert1, Alexander Ulyashin2, Yuri Bumay2, Günter Grabosch1, Reinhart Job1, and Wolfgang Fahrner1 — 1FernUniversität Hagen, Bauelemente der Elektrotechnik, Postfach 940, 54084 Hagen — 2Belarussian State Polytechnical Academy, Skariny Av. 65, 220027, Minsk, Belarus
The results of one and two steps hydrogen plasma-assisted doping by thermal donors and the formation of p-n junctions in p-type Czochralski (Cz) silicon substrates at low temperatures (below 500∘C) are presented. The one step process was carried out by direct hydrogen plasma treatment at 400∘C and the two step one by hydrogen plasma treatment at lower temperatures and additional heat treatments at 400 - 450∘C. Spreading-resistance- and capacitance-voltage-measurements are used for the characterization of resistance and carrier profiles and the location of the p-n junction. The results are promising for a low temperature technology of a p-n junction formation in p-type Cz silicon.