Münster 1997 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 38: Implantation

HL 38.1: Vortrag

Freitag, 21. März 1997, 11:00–11:15, H2

Low-Temperature Doping of p-Type Czochralski Silicon by Hydrogen Plasma Treatment — •Dietmar Borchert¹, Alexander Ulyashin², Yuri Bumay², Günter Grabosch¹, Reinhart Job¹, and Wolfgang Fahrner¹ — ¹FernUniversität Hagen, Bauelemente der Elektrotechnik, Postfach 940, 54084 Hagen — ²Belarussian State Polytechnical Academy, Skariny Av. 65, 220027, Minsk, Belarus

The results of one and two steps hydrogen plasma-assisted doping by thermal donors and the formation of p-n junctions in p-type Czochralski (Cz) silicon substrates at low temperatures (below 500^∘C) are presented. The one step process was carried out by direct hydrogen plasma treatment at 400^∘C and the two step one by hydrogen plasma treatment at lower temperatures and additional heat treatments at 400 - 450^∘C. Spreading-resistance- and capacitance-voltage-measurements are used for the characterization of resistance and carrier profiles and the location of the p-n junction. The results are promising for a low temperature technology of a p-n junction formation in p-type Cz silicon.