Münster 1997 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 38: Implantation
HL 38.2: Vortrag
Freitag, 21. März 1997, 11:15–11:30, H2
Model of Ion Track in Diamond Subjected to High Energy Ion Implantation — •V.A. Martinovich1, V.S. Varichenko2,3, D.P. Ertchak4, A.M. Zaitsev3, and W.R. Fahrner5 — 1Belarussian State University, HEII Laboratory, Minsk 22050, Belarus — 2Belarussian State University, HEII Laboratory, Minsk 220050, Belarus — 3FernUniversity Hagen, LGBE, Haldener Str. 182, 58084 Hagen, Germany — 4Belarussian State University, HEII Laboratory, Minsk 220080, Belarus — 5FernUniversity Hagen, LGBE, Haldener Str. 182, 58084 Hagen, Germany
The results of ESR investigations of diamond irradiated by 335 MeV Ni ions within a dose range of 5×1012−5×1014cm−2 have been analysed. The main feature of the defect structure formed by the high energy ion irradiation is believed to be the latent ion tracks an essential feature of which are one-dimensional nontetrahedrally ordered paramagnetic areas providing the spin relaxation by solitons. At the highest irradiation dose, when the ion tracks are overlapped, the length of these areas has been estimated to be about of 0.1-1.0 microns. A possible internal structure of the ion track in diamond is discussed.