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HL: Halbleiterphysik

HL 38: Implantation

HL 38.5: Talk

Friday, March 21, 1997, 12:00–12:15, H2

Microwave Photoconductivity and Optical Absorption Investigations of Ion Implanted Diamond — •V.S. Varichenko^2,3, A.G. Zakharov¹, and A.M. Zaitsev³ — ¹Belarussian State University, HEII Laboratory, Minsk 220050, Belarus — ²Belarussian State University, HEII Laboratory, Minsk 220050,Belarus — ³FernUniversity Hagen, LGBE, Haldener Str. 182, 58084 Hagen, Germany

Type IIa natural diamonds have been subjected to high energy boron irradiation (13.6 MeV) and multienergy boron implantation (20-150 keV). Changes of the physical parameters of the irradiated layers have been studied during high temperature annealing. Recovering processes in the damaged diamond lattice with temperature are explained in terms of annihilation of interstitial and vacancy type defects. A possible influence of diamond surface reconstruction at high temperature on the measured parameters is also discussed.