Münster 1997 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 38: Implantation
HL 38.6: Vortrag
Freitag, 21. März 1997, 12:15–12:30, H2
ESR of Silicon Irradiated with High Energy Noble Gas Ions — •V.S. Varichenko3,4, E.N. Drozdova1, N.M. Penina2, and A.M. Zaitsev5 — 1Belarussian State University, Department of Semiconductor Physics, Minsk 220050, Belarus — 2Belarussian State University, Department of Semiconductor Physics, Minsk 220050, Belarus — 3Belarussian State University, HEII Laboratory, Minsk 220050, Belarus — 4FernUniversity Hagen, LGBE, Haldener Str.182, 58084 Hagen, Germany — 5FernUniversity Hagen, LGBE, Haldener Str. 182, 58084 Hagen, Germany
P-type (111) oriented silicon samples of specific resistivity 10 Ohm x cm irradiated with krypton ions (210 MeV, 1×1012−3×1014cm−2) and xenon ions (5.68 GeV, 5×1012−5×1013cm−2) have been investigated. The irradiated samples were subjected to thermal treatment in hydrogen plasma and vacuum. Both irradiations have caused intensive anisotropic lines with g-value 2.3 and widths of 300 G and 200 G for krypton and xenon, respectively. The appearence of these lines is explained by a magnetic ordering in defect structure produced by high energy ion irradiation.