Münster 1997 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 40: Poster III
HL 40.34: Poster
Freitag, 21. März 1997, 11:00–14:00, Z
Alternative method for determining the shear deformation potential of the valence band in III-V semiconductor quantum wells — •Georg Rau1, Philip Klipstein1, Nikos Nicopoulos1, Neil Johnson1, and William Tribe2 — 1Clarendon Lab, Dept. of Physics, Univ. of Oxford, Parks Road, Oxford OX1 3PU, UK — 2Semiconductor Group, Cavendish Lab., Madingley Road, Cambridge CB3 0HE, UK
We present an alternative method for determining the shear deformation potential b of the valence band in III-V semiconductors. Instead of bulk semiconductors we use quantum well structures and apply uniaxial stress perpendicular to the growth direction. Using analytical solutions we show that the first confined hole state has a pronounced and characteristic non-linear energy shift with respect to stress. This allows the hydrostatic and shear deformation potentials a and b to be determined independently from the stress dependence of the bandgap only, which can be measured by a wider range of experimental techniques than those necessary for obtaining deformation potentials from bulk material. Measurements on a (GaAs)10/(AlAs)10 superlattice yielded a value for b which is in good agreement with recent results from bulk measurements and hence support the validity of our proposed method.