Münster 1997 – wissenschaftliches Programm
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O: Oberflächenphysik
O 6: POSTER I
O 6.69: Poster
Montag, 17. März 1997, 14:15–15:45, AULA
Epitaxial Growth of Ultrathin Ag Films on Si(111) and Si(100) — •M. Riehl-Chudoba1, V.A. Gasparov2, B. Schröter1, and W. Richter1 — 1Institut für Festkörperphysik, Friedrich-Schiller- Universität Jena, Max-Wien-Platz 1, D-07743 Jena — 2Institute of Solid State Physics RAS, 142432 Chernogolovka, Russia
We studied the growth of Ag on different Si surfaces at low temperatures (T = 130 K) with the aim to achieve thin metallic films (2-5 monolayers), which could be applied for subsequent nanometer scale patterning. The structure and morphology of the Ag layers have been investigated by means of XPS, UPS, LEED and STM. The low temperature deposition yields an epitaxial growth on clean Si(100)2x1, which has already been described by Horn-von Hoegen et al. [1]. The LEED indicates a twinned Ag(111) structure at coverages as low as 3 ML. A new overstructure has been observed after deposition of Ag onto a Ag/Si(111)√3 ×√3R30∘ substrate at 110 K. The 4 ML thick continuous metal layer is showing a √3 × √3R30∘ LEED structure, which has not been described in the literature yet. The lateral domain size of the film ranges between 50 nm and 100 nm.
[1] M. Horn-von Hoegen, T.Schmidt, G. Meyer, D. Winau, K.H. Rieder, Phys. Rev. B 52, 10764 (1995)