Regensburg 1998 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 2: Ionenimplantation II
DS 2.2: Fachvortrag
Montag, 23. März 1998, 11:15–11:30, H 31
Lattice Disorder and Recovery in Pb Implanted PZT Thin Films — •R. Fromknecht, R. Aidam, and O. Meyer — Forschungszentrum Karlsruhe, INFP, Postfach 3640, D-76021 Karlsruhe
Epitaxial <001> oriented PZT thin films (Pb0.98Zr0.54Ti0.46O3) were prepared by sputtering onto (100) SrTiO3 and (100) MgO substrates at 570∘C. Rutherford backscattering (RBS) analysis of the as-deposited thin films revealed that the Pb content increased with increasing O2 partial pressure in the Ar-O2 sputter gas and reached a value of Pb0.98 under optimized conditions. Channeling measurements (RBS-C) resulted minimum yield values of 7%. The dechanneling component was attributed to stacking faults as determined from energy-dependent dechanneling measurements. Implantation of 260 keV Pb ions at room temperature at a dose of 5·1013 Pb+/cm2 amorphized the thin films. Solid phase epitaxial regrowth occurred in the temperature region between 400∘C and 500∘C. At temperatures above 500∘C the recovery is retarded while at the same time a disturbed interface appeared. Besides the amorphous region in the range of the implanted layer, ion implantation produces enhanced dechanneling throughout the total film thickness, which is attributed to dislocations.