Regensburg 1998 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 20: Elektrische Eigenschaften
DS 20.5: Fachvortrag
Donnerstag, 26. März 1998, 16:15–16:30, H 31
The Oxidation Kinetics of Thin Copper Films Studied by Resistivity Measurements — •H.U. Finzel1, M. Rauh2, and P. Wissmann2 — 1FH Niederrhein, FB Chemie, Adlerstrasse 32, D-47798 Krefeld — 2Institute of Physical and Theoretical Chemistry of the University Erlangen-N"urnberg, Egerlandstrasse 3, D-91058 Erlangen
Resistivity Measurements on thin metal films are a very suitable tool to study the kinetics of oxidation. The method is applied to 50 -60 nm thick copper films deposited on glass substrats under UHV condition. After annealing at 423 K, the films are exposed to pure oxygen at various temperatures in the range of 358 K - 408 K while recording the electrical resistivity in situ. At these temperatures, the oxygen begins to penetrate into the interior of the films. A relatively steep increase in the film resistivity is observed which can be attributed to a layer growth of Cu2O. A linear time law is valid in good approximation, from the temperature depen- dence an activation energy of 64 kJ/mol is derived. The linear time law can be attributed to the influence of an adsorbed molecular species of oxygen on the reaction velocity. Model calculations show that an oxygen diffusion in the grain boundaries play an important role.