Regensburg 1998 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 24: Postersitzung
DS 24.27: Poster
Donnerstag, 26. März 1998, 15:00–19:00, PF A
MOCVD of TiN Layers monitored by Infrared Spectroscopic Ellipsometry — •Alexander Hausmann1,2 and Guenter Weidner1,2 — 1Institute for Semiconductor Physics — 2Frankfurt (Oder)
We have grown TiN layers from Tetrakisdimethylamidotitanium (TDMAT) using post-deposition treatments in remote plasma acti- vated nitrogen. Layer deposition results from several cycles of deposition/plasma treatment. We have used phase modulated infra- red spectroscopic ellipsometry (IREL) for growth monitoring of TiN layer deposition for the first time. The IREL measurements reveal a strong effect of plasma activated nitrogen resulting in significant features at the wavenumber of 2000 cm−1 in the psi and delta spectra of the ellipsometer. We have found no in- fluence of the bias voltage (-75 V to +75 V) on the IREL spectra. We have determined the penetration-depth of our remote plasma treatment to be 0.5 nm. The optimization of other plasma condi- tions lead to air stable TiN layers with resistivities of 400 µOhmcm. The increase of the resistivity is below 2 % after an air exposure of 200 h. XPS depth profiles of TDMAT deposited films with optimized plasma conditions show a significant in- crease of the nitrogen content and a significant decrease of the carbon content. The oxygen incorporation after air exposure is reduced below the detection limit.