Regensburg 1998 – wissenschaftliches Programm

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O: Oberflächenphysik

O 11: Poster (I)

O 11.13: Poster

Montag, 23. März 1998, 19:30–22:30, Bereich C

Van der Waals epitaxy of HfS₂ on WSe₂ — •C. Kreis, M. Traving, L. Kipp, and M. Skibowski — Institut f"ur Experimentelle und Angewandte Physik, Universit"at Kiel, D–24118 Kiel

Using van der Waals epitaxy we have prepared thin epitaxial films of HfS₂ on WSe₂ substrates. WSe₂ has been grown by chemical vapour transport (CVT). We have examined the influence of the preparation parameters like substrate temperature, Hf-flux and topography of the substrate surface on epitaxial growth. For several preparation steps we have studied the successive transition from the clean substrate surface of WSe₂ to the first monolayers of HfS₂ using the following methods: The occupied and unoccupied electronic structure has been characterized by combined angle resolved photoemission and inverse photoemission spectroscopy (CARPIP). Epitaxial growth and geometrical structure of HfS₂ have been studied by low energy electron diffraction (LEED). Further information about the crystal growth has been obtained by scanning tunneling microscopy (STM).