Heidelberg 1999 – scientific programme

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Q: Quantenoptik

Q 30: Poster: Optische Technik

Q 30.10: Poster

Tuesday, March 16, 1999, 16:30–18:30, PH

Investigations of the Optical and Electrical Properties of n-Si by Using Nd:YAG Laser — •Ahmed A. I. Khalil¹ and M. Mounir² — ¹National Institute of Laser Enhanced Science (NILES), Cairo University, Giza, EGYPT — ²Physics Department, Faculty of Science, Cairo University, Giza, EGYPT

A study of the interaction of laser radiation with Si has been widely observed in the microelectronics applications. We are studied the optical and electrical properties of n-Si by using periodically pulsed, powerful pulsed, powerful Q-switched Nd:YAG laser beam (λ =1064 nm, 532 nm, 355 nm) in order to achieve a large dynamic range. the dependence of the optical and electrical properties of Si on both wavelength and laser power are studied. The present results are compared with the results obtained using CO₂ laser and thermal annealing processes. Different types of microdefects are obtained by using a reflection optical microscope (ROM) and scanning electron microscope (SEM). Also the threshold intensity for such damage was determined.