Münster 1999 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 4: Ionenimplantation IV
DS 4.3: Fachvortrag
Montag, 22. März 1999, 16:00–16:15, PC 7
Ion-beam induced mixing in Ni3N/Al and Ni3N/Si bilayers — •S. Dhar, L. Rissanen, P. Schaaf, and K.-P. Lieb — II. Physikalisches Institut and SFB 345, Universit"at G"ottingen, 37073 Göttingen
Metal nitrides are an important class of materials due to their unique chemical and physical properties, which make them very useful for technical applications in electronic devices and coating technology. In the present work, experimental results of ion-beam mixing in Ni3N/Al and Ni3N/Si bilayers are reported. Ni3N layer of thickness 100-130 nm were produced via reactive magnetron sputtering and deposited onto Si(100) or Al(100nm)/Si(100) substrates. These samples were irradiated at 80 K with Xe ion at energies between 250 and 450 keV. The fluence were step-wise increased up to 6x1016 ions/cm2. The samples were characterized before and after irradiation by Rutherford Backscattering Spectrometry, Resonant Nuclear Reaction Analysis using 15N(p,αγ) reaction, X-ray Diffraction, Atomic Force Microscopy and Surface Profilometry. The results exihibit a mixing rate higher than for the ballistic mixing. These will be discussed with respect to chemical driving forces. Results on the surface topography and the nitrogen diffusion after ion irradiation will also be presented.