Regensburg 2000 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 38: Postersitzung
DS 38.1: Poster
Dienstag, 28. März 2000, 09:30–17:30, Poster B
Radiation damage in KTiOPO4 by ion implantation of light elements. — •Werner Wesch1, Thomas Opfermann1, and Thomas Höche2 — 1Friedrich-Schiller-Universität Jena, Institut für Festkörper-physik, Max-Wien-Platz 1, 07743 Jena — 2Friedrich-Schiller-Universität Jena, Institut für Glaschemie, Fraunhoferstrasse 6, 07743 Jena
The radiation damage in KTiOPO4 (KTP) single crystals caused by He+, Li+ and B+ ion implantation was investigated by means of XTEM and RBS. For high ion fluences, XTEM investigations of the He+ and Li+ implantations revealed buried amorphous layers in the region where nuclear energy deposition dominates. For samples prepared at room temperature, the critical number of displacements per atom (dpa), which is necessary for amorphisation is higher than in the case of 100 K implantation.
For both implantation regimes buried amorphous layers are covered by an almost perfect crystalline KTP layer. Between these two regions the crystalline structure is gradually decomposing with depth due to the presence of amorphous clusters of increasing size. In the superficial crystalline layer, where the nuclear energy deposition is small in comparison to the region of maximum nuclear energy deposition, no defects were found by means of XTEM. Nevertheless, RBS investigations indicated the presence of point defects. However, the B+ implantations show a different behaviour. A significant damaging in the depth of dominating electronic excitation even at low ion fluence is detectable.