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TT: Tiefe Temperaturen

TT 25: Postersitzung III: Pinning und Vortexdynamik, Massive HTSL, Bandleiter, Transporteigenschaften in HTSL, SL dünner Filme, Elektronen und Phononen in HTSL, Tunneln, Borkarbide, Quantenphasen und Metall-Isolator-Überg
änge, Anwendungen, Sonstiges

TT 25.37: Poster

Donnerstag, 29. März 2001, 14:30–17:00, Rang S\ 3

Doping dependence of the electronic Raman spectra in Bi-2212. — •F. Venturini¹, M. Opel¹, R. Hackl¹, H. Berger², and B. Revaz³ — ¹Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, D-85748 Garching, Germany — ²EPFL, Ecublens, CH-1015 Lausanne, Switzerland — ³DPMC, Université de Genève, CH-1211 Genève, Switzerland

The electronic Raman spectra of Bi₂Sr₂CaCu₂O_8+δ has been studied in a wide doping range as a function of polarization, temperature and incoming photon energy ℏ ω. In the range of energies 1.6 eV < ℏ ω < 2.7 eV we could not find any significant variation of the electronic spectra. In the superconducting state the spectra of the B_2g symmetry seem to scale with the transition temperature T_c for all doping levels p between 0.09 and 0.23 while we find deviations from the scaling behaviour in B_1g symmetry. The spectral redistribution at low temperature disappears very close to the respective T_c of the samples. The superconductivity-induced features cannot be observed at B_1g symmetry for underdoped samples. They fade away at a doping level lower then 0.13.