Bochum 2002 – scientific programme

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PV: Plenarvorträge

PV VI

PV VI: Plenary Talk

Wednesday, March 20, 2002, 09:00–09:45, HZO 30

Extreme UV Sources for Microlithography — •Günther Derra — Philips GmbH Forschungslaboratorien, Weisshausstr. 2, 52066 Aachen

During the last decades, structures on a semiconductor chip have been constantly reduced in size, as described by Moore’s law. As the optical resolution of a lithographic process is determined by the wavelength of the light used, ever decreasing feature sizes have been enabled by using shorter wavelengts. With 193 nm, used commonly today, feature sizes of about 90 nm can be obtained. In only five years, however, structures of 50nm and below will be needed. During the last two years, it became clear, that the semiconductor industry prefers extreme UV lithography (EUVL) at a wavelength of 13.5 nm for making such small structures on a wafer. Compared to other technologies, EUVL offers considerable benefits with respect to adaptation of existing lithographic process know-how and cost.

While real roadblocks do not seem to exist any more, lots of severe technical problems still have to be solved. One of the most critical challenges is the development of an extreme UV light source. The demands are very high: an EUV output power at (13.5 +/-0.135) nm of 50-100W in a certain intermediate focus of the system, high pulse repetition rate, stability and extremely low level of contamination from the source are needed. Several possible source concepts, including the Philips / Fraunhofer hollow cathode triggered (HCT) pinch discharge source, will be discussed.