Regensburg 2002 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 15: Ionenimplantation: Erzeugung, Nachweis und Ausheilung von Defekten
DS 15.1: Vortrag
Mittwoch, 13. März 2002, 15:15–15:30, HS 32
Depth dependence of radiation damage in Li+-implanted KTiOPO4 — •F. Schrempel1, Th. Höche2, J.-P. Ruske3, U. Grusemann3, and W. Wesch1 — 1Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, D-07743 Jena — 2Lehrstuhl für Kristallographie, Institut für Physik, Humboldt-Universität zu Berlin, Invalidenstrasse 110, D-10115 Berlin — 3Friedrich-Schiller-Universität Jena, Institut für Angewandte Physik, Max-Wien-Platz 1, D-07743 Jena
KTiOPO4 single crystals were irradiated at 100 K and 295 K with 1 MeV Li+-ions at an ion fluence of 3x1015 cm−2 and subsequently annealed at 620 K and 720 K. The irradiated layers were analyzed by means of various complementary methods (RBS, XTEM, EELS, m-line spectroscopy). The complex damage structure produced consists of a slightly damaged covering layer, a transition layer with amorphous clusters and a buried amorphous layer the thicknesses of which depends on the irradiation temperature. The depth distribution of the damage is in accordance with the distribution of the nuclear energy deposition. The buried amorphous layer possesses a significantly reduced re-fractive index thus acting as a refractive index barrier for waveguiding. Upon thermal treatment, defects anneal mainly in the covering layer, the barrier height is preserved and the slope of the bar-rier becomes steeper. The attenuation of light in the waveguide after thermal treatment is as low as 1.5 dB cm−1.