Regensburg 2002 – wissenschaftliches Programm
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MA: Magnetismus
MA 10: Poster : Dünne Schichten(1-21),Spinabh.Transp.(22-39),Exch.Bias(40-51),Spindyn.(52-55),Mikromag.(56-66),Partikel(67-74),Abb.Verf.(75-77),Oberfl.+Spinelektr.+Elektr.Theo+Mikromag(75-87),PÜ+Aniso+Werkst/Leg.(88-103),Mol.Mag.+N-dim+Messm.+Postdead(104-111
MA 10.48: Poster
Dienstag, 12. März 2002, 15:00–19:00, Bereich A
Epitaxial Fe/MgO/Fe(110) trilayers as a model system for magnetic tunnel junctions — •J. O. Hauch, P. Turban, M. Fraune, K. Brüggemann, U. Rüdiger, and G. Güntherodt — II. Physikalisches Institut, Rheinisch-Westfälische Technische Hochschule Aachen, D-52056 Aachen, Germany
Recently theoretical and experimental efforts have been devoted to the
study of epitaxial magnetic tunnel junctions (MTJs). Such model
systems are essential for the fundamental understanding of the
spin-dependent tunneling mechanism. Here, first results on the
epitaxial growth of thin insulating MgO(110) barriers on Fe(110)
layers are presented. The Fe(110) surface is of interest due to
its high spin polarization of -80% at the Fermi level EF at
T=285 K, as recently shown by spin-polarized photoemission
experiments [1]. First, a single-crystalline Fe(110) electrode has
been grown on an Al2O3(1120) substrate with the
use of a Mo(110) seed layer, resulting in atomically
flat Fe(110) films. An epitaxial growth of
insulating MgO(110) films on Fe(110) layers has been achieved by
electron beam evaporation. The growth mode and the structural
properties of MgO(110) layers have been studied by RHEED, LEED,
and STM/AFM.
Y. Dedkov, U. Rüdiger, and G. Güntherodt, Phys. Rev. B, in
press.