Regensburg 2002 – wissenschaftliches Programm

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O: Oberflächenphysik

O 31: Halbleiteroberfl
ächen (II)

O 31.7: Vortrag

Donnerstag, 14. März 2002, 12:45–13:00, H45

Manganese films on Si(111)7×7: chemical reactions and interface electronic structure — •Ashwani Kumar, Massimo Tallarida, Martin Hansmann, Ulrich Starke, and Karsten Horn — Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin

In recent years there is a resurgence in the study of thin films of magnetic materials and their interfaces with semiconductor surfaces due to their prospect as the materials of technological importance. In this contribution we report the results of photoemission spectroscopy and scanning tunneling microscopy of thin films of Mn on Si(111)7×7. Our initial investigations indicate that the thin films of Mn grow as islands on Si(111)7×7 instead of uniform films. Moreover, while the 1×1 phase of manganese silicides forms on Si(111)7×7 for upto 1 ML thickness of Mn annealed at ∼200 C, the √3×√3 R30 phase forms for higher thicknesses (upto 10 ML) of Mn annealed at ∼400 C. From the Si 2p and valence-band data it is inferred that in both the cases, the surface is possibly terminated by Si atoms and the 1×1 phase is semiconducting while the √3×√3 R30 phase is metallic.

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