Regensburg 2002 – wissenschaftliches Programm

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O: Oberflächenphysik

O 33: Epitaxie und Wachstum (II)

O 33.9: Vortrag

Donnerstag, 14. März 2002, 17:30–17:45, H44

STM Studies of Ge Structures Deposited by CVD on Si(111)-(7×7) — •Selvi Gopalakrishnan, Hubert Rauscher, and Jürgen Behm — Universität Ulm, Abt. Oberflächenchemie und Katalyse, 89069 Ulm

Although silicon is the dominant material used in the semiconductor industry, in recent years there are increasing applications for SiGe heteroepitaxial layers in heterobipolar transistors and in optoelectronics. Hence, it is important to understand the processes of SiGe heteroepitaxy. Previous studies of Ge deposition on the Si(111)-(7×7) surface by CVD have reported growth of MBE like 3D structures under certain conditions [1]. It has been suggested that radiation induced defects on the surface could promote the growth of these 3D structures. In this work, Ge deposition was carried out by CVD at a temperature of 730 K. The Si(111)-(7×7) substrates were exposed to X-ray radiation prior to deposition to create specific defects. Annealing was used to attempt to remove the radiation induced defects. Deposition was then carried out at different GeH4 exposures and at high and low deposition pressures and the subsequent Ge growth was studied by STM and XPS. The influence of irradiation, annealing and pressure on Ge growth on Si(111)-(7×7) by CVD will be discussed in this presentation.
J. Braun, M. Haupt, K. Thonke, R. Sauer, H. Rauscher, R. J. Behm, Surf. Sci. 454-456 (2000) 811.

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