Dresden 2003 – scientific programme

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CPP: Chemische Physik und Polymerphysik

CPP 4: SYMPOSIUM Materials for Molecular Electronics

CPP 4.1: Talk

Monday, March 24, 2003, 14:30–15:00, ZEU/160

Integration of Carbon Nanotubes in Microelectronic Applications — •Franz Kreupl, Andrew P. Graham, Georg S. Duesberg, Robert Seidel, Maik Liebau, Eugen Unger, and Wolfgang Hoenlein — Infineon Technologies AG, Corporate Research, Otto-Hahn-Ring 6, 81739 Muenchen, Germany

The outstanding properties of carbon nanotubes (CNTs) make them particularly interesting for microelectronic applications such as interconnects and devices. The parallel integration of CNTs using compatible processes is critical for their future application and implies the simultaneous processing of millions of CNTs. We present our concepts for CNT-based interconnects and vertical, surrounding-gate transistors for large-scale integration. In order to realize this, the precise placement of CNTs with lithographic methods and the controlled production of CNTs with defined properties is necessary. We demonstrate the creation of vertical interconnects (vias) consisting of multi-walled nanotubes and show, for the first time, the growth of single, isolated CNTs at lithographically defined locations. Furthermore, self-aligned, single-walled CNT transistors have been realized and their performance compared with future silicon-based devices. A comparison between best CNT-transistors achieved hitherto and best MOSFET-transistors highlights the potential of nanotubes for future microelectronic applications.