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Dresden 2003 – wissenschaftliches Programm

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DF: Dielektrische Festkörper

DF 7: Poster

DF 7.14: Poster

Mittwoch, 26. März 2003, 14:30–18:00, P2a

Formation of epitaxial BaTiO3/SrTiO3 multilayers grown on Nb-doped SrTiO3 (001) substrates — •Alina Visinoiu1, Roland Scholz1, Soma Chattopadhyay2, Marin Alexe1, Dietrich Hesse1, and Ulrich Gösele11Max Planck Institute of Microstructure Physics, D-06120 Halle (Saale), Germany. — 2Argonne National Laboratory, Advanced Photon Source, MRCAT-Sector 10, 9700 South Cass Avenue, Argonne, IL 60439, USA.

Epitaxial BaTiO3/SrTiO3 multilayers were grown on Nb-doped SrTiO3 (SrTiO3:Nb) (001) substrates by pulsed laser deposition. The formation of epitaxial BaTiO3/SrTiO3 multilayers was studied in terms of growth mechanism including surface morphologies, crystalline orientations, microstructures, and BaTiO3/SrTiO3 interfaces. Epitaxial BaTiO3 films are growing with a layer-then-island (Stranski-Krastanov) mechanism. X-ray diffraction and cross-sectional high resolution transmission electron microscopy confirm the epitaxy of these films. Up to a thickness of 6 nm the BaTiO3 films showed no defects. A sharp BaTiO3/SrTiO3 interface was observed, while the SrTiO3/BaTiO3 interface was rough, probably due to different growth mechanisms of the two materials or due to an asymmetry of the mobility of Ba and Sr atoms reaching the SrTiO3 and BaTiO3 layers. This feature is significant in view of actual efforts to grow epitaxial superlattices involving very thin individual layers of BaTiO3 and/or SrTiO3. Electrical characterization of BaTiO3 films and BaTiO3/SrTiO3 multilayers was performed in terms of dielectric properties.

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