Dresden 2003 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 15: Organische Schichten
DS 15.4: Vortrag
Mittwoch, 26. März 2003, 17:30–17:45, GER/38
Morphology, Structure, and Electronic Structure of Interfaces Between the Diindenoperylene (DIP) and Au — •A. C. Dürr1, N. Koch2,3, J. Ghijsen4, R. L. Johnson5, J.-J. Pireaux4, J. Schwartz3, H. Dosch1,6, and Antoine Kahn2 — 1Max-Planck-Institut für Metallfosrchung, Heisenbergstraße 3, D-70569 Stuttgart — 2Dptm. of Electrical Engineering, Princeton University, NJ 08544, USA — 3Dptm. of Chemistry, Princeton University, NJ 08544, USA — 4Facultes Universitaires Notre-Dame de la Paix, B-5000 Namur, Belgium — 5II. Institut für Experimentalphysik, Universität Hamburg, D-22761, Hamburg — 6Universität Stuttgart, Pfaffenwaldring 57, D-70550 Stuttgart
We present a combined TEM, AFM, X-ray-diffraction, and UPS study of interfaces formed between Au and the organic semiconductor DIP. We use UPS to study the evolution of the electronic structure of the DIP-on-Au and Au-on-DIP interfaces. DIP is found to physisorb on Au. The energy difference between substrate Fermi level and the DIP-HOMO at the interface is 1.0 eV increasing to 1.45 eV away from the interface due to decreasing screening by Au and possible changes in molecular conformation. Strong island-like growth of the DIP films is observed by AFM. For Au deposition onto DIP, UPS suggests and cross-sectional TEM confirms the formation of Au clusters percolating only for Au coverages higher than 32 Å to give continuous metal surface coverage and conductivity. Finally, X-ray-diffraction measurements show that the DIP-molecules lie flat on the Au surface.