Dresden 2003 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 17: Ionenimplantation II
DS 17.10: Vortrag
Donnerstag, 27. März 2003, 12:30–12:45, GER/37
Dynamic epitaxy and luminescence after Ba implantation in α-quartz — •S. Dhar1, S. Gasiorek1, P. K. Sahoo1,2, V. N. Kulkarni1,2, U. Vetter1, H. Hofsäss1, and K.-P. Lieb1 — 1Universität Göttingen, II. Physikalisches Institut, Bunsenstasse 7-9, 37073 Göttingen, Germany — 2Indian Institute of Technology, Kanpur, India
Recently, we have developed two methods for solid phase epitaxial
regrowth (SPEG) of ion beam damaged α-quartz, namely chemically
guided SPEG [1,2] and dynamic SPEG [3]. In this report we present the
results of dynamic SPEG and optical properties of α-quartz
irradiated with 175 keV Ba ions with a fluence of 1x1015
ions/cm2 at temperatures in the range of RT - 900oC using the
Göttingen 500 kV ion implanter. Rutherford backscattering-channeling
analysis of Ba irradiated sample at RT shows the formation of a 170 nm
thick amorphous SiO2 layer on the sample surface. The thickness of
this amorphous layer decreases with increasing temperature during
irradiation. At 850 - 900oC when ion irradiation-induced damage and
dynamic thermal annealing compensate each other, Ba irradiation produces
almost no damage in α-quartz. The cathodoluminescence analyses show
the blue luminescence in all the samples irradiated above 600oC. In
addition to this, a peak in the violet range also appears in the samples
irradiated above 800oC.
[1]F. Roccaforte, et al. Appl. Phys. Lett. 73, 1349 (1998); 75, 2903 (1999); 76, 3709 (2000); J. Appl. Phys. 89, 3611
(2001).
[2]S. Gasiorek, S. Dhar, and K. P. Lieb, Phys. Rev. B (submitted).
[3]S. Dhar, W. Bolse, K. P. Lieb, J. Appl. Phys. 85, 3120 (1999).