Dresden 2003 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 19: Ionenstrahlverfahren II – Oberfl
ächenmodifizierung
DS 19.4: Vortrag
Donnerstag, 27. März 2003, 17:45–18:00, GER/37
Ion erosion of self-organized SiGe films — •Christian Hofer1, Stephan Abermann1, Christian Teichert1, Thomas Bobek2, Stefan Facsko2, Heinrich Kurz2, Klara Lyutovich3, and Erich Kasper3 — 1Institut für Physik, Montanuniversität Leoben, Austria — 2Institut für Halbleitertechnik, RWTH Aachen, Germany — 3Institut für Halbleitertechnik, Universität Stuttgart, Germany
Noble gas ion bombardment of compound semiconductors has been found to result in well-ordered nanostructure arrays [1]. To explore the reasons why this phenomenon is hardly observed on silicon surfaces, we investigated the morphology of various self-organized SiGe films grown on Si(001) under subsequent Ar+ ion bombardment. For a checkerboard array of {105} pyramids and pits [2] the nanopattern could indeed be transformed into the Si substrate. First, the pits transform into shallow troughs and later smaller craters evolve. The role of misfit dislocations in the pattern transition and the dependence on ion energy are discussed in the framework of current theories of ion bombardment induced pattern formation.
[1] S. Facsko, et al. Science 285, 1551 (1999); F. Frost, et al., Phys. Rev. Lett. 85, 4116 (2000)
[2] C. Teichert et al., Thin Solid Films 380, 28 (2000)