Dresden 2003 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 2: FV-internes Symposium „Dünnschichtanalytik“ II

DS 2.2: Hauptvortrag

Montag, 24. März 2003, 15:10–15:50, GER/37

Thin Film Analysis and Three-Dimensional Microanalysis with Time-of-Flight SIMS — •Ewald Niehuis — ION-TOF GmbH, Mendelstr. 11, 48149 Muenster

Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) is well known as a technique for chemical analysis of solid surfaces. It can be used for the detection of elements in the uppermost monolayer with sub-ppm sensitivity. In addition, mass analysis of molecular secondary ions, fragments and cluster ions provides detailed information on the molecular composition of all kind of materials. By using a liquid metal ion gun, typically operated with Ga or Au, elemental and molecular maps can be generated in a microprobe mode with a lateral resolution of 100 nm. Due to the pulsed operation of the primary beam, the sample consumption is extremely small and the analytical volume is restricted to a depth of about 1 nm. However, more recently TOF-SIMS has been combined with low energy sputtering in order to acquire depth profiles with high depth resolution and with reasonable sputter rates. Here, the parallel mass detection of TOF-SIMS is attractive especially in depth profiling of complex materials, of samples with unknown composition and for interface analysis. The combination of high lateral resolution imaging and high depth resolution by low energy sputtering results in powerful 3D analysis capabilities. In this paper we will discuss the technique in detail and present various applications in thin film analysis and microanalysis.