HL 10: Halbleiterlaser II
Montag, 24. März 2003, 15:15–17:00, BEY/81
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15:15 |
HL 10.1 |
Structural parameters for semiconductor heterostructures through comparison of computed and measured photoluminescence spectra — •Christoph Schlichenmaier, Jörg Hader, Jerry V. Molony, Walter Hoyer, Mackillo Kira, and Stephan W. Koch
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15:30 |
HL 10.2 |
Dependence of Device Characterisation of (Ga,In)As/(Al,In)As Quantum-Cascade Lasers (QCL) on MBE Growth and Material Parameters — •S. Dressler, M.P. Semtsiv, W.T. Masselink, J. Böttcher, H. Künzel, M. Giehler, H.T. Grahn, and H. Kostial
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15:45 |
HL 10.3 |
Lasing properties of GaAs/(Al,Ga)As quantum-cascade lasers as a function of injector doping density — •Manfred Giehler, Rudolf Hey, Helmar Kostial, Swen Cronenberg, Tomohiko Ohtsuka, Lutz Schrottke, and Holger T. Grahn
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16:00 |
HL 10.4 |
Subband population in GaAs/Al0.33Ga0.67As quantum-cascade structures — •Lutz Schrottke, Rudolf Hey, Helmar Kostial, Tomohiko Ohtsuka, and Holger T. Grahn
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16:15 |
HL 10.5 |
Coherent versus incoherent charge transport in semiconductor quantum cascade structures — •M. Woerner, F. Eickemeyer, K. Reimann, T. Elsaesser, S. Barbieri, C. Sirtori, G. Strasser, T. Müller, R. Bratschitsch, and K. Unterrainer
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16:30 |
HL 10.6 |
Laser threshold reduction in a spintronic device — •Jörg Rudolph, Daniel Hägele, H. Gibbs, G. Khitrova, and Michael Oestreich
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16:45 |
HL 10.7 |
Perspektiven von Quantenkaskadenlasern mit GaInAs Wellenleitern — •Nicolaus Ulbrich, Giuseppe Scarpa, Gerhard Abstreiter und Markus-Christian Amann
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