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HL: Halbleiterphysik

HL 10: Halbleiterlaser II

HL 10.2: Talk

Monday, March 24, 2003, 15:30–15:45, BEY/81

Dependence of Device Characterisation of (Ga,In)As/(Al,In)As Quantum-Cascade Lasers (QCL) on MBE Growth and Material Parameters — •S. Dressler¹, M.P. Semtsiv¹, W.T. Masselink¹, J. Böttcher², H. Künzel², M. Giehler³, H.T. Grahn³, and H. Kostial³ — ¹Institut für Physik, Humboldt-Universität zu Berlin — ²Heinrich-Hertz-Indtitut, Berlin — ³Paul-Drude-Institut, Berlin

Strain-compensated quantum-cascade lasers (QCL) have been grown by molecular-beam epitaxy (MBE) and gas-source MBE based on the QCL design of Ref. [1]. As cladding layer materials, (Ga,In)As and (Al,In)As have been used. Furthermore, several growth and material parameters in the active regions such as doping and growth temperature have been varied. Processing of QCL devices and test structures was primarily based on wet chemical etching, and a chemically-assisted ion-beam etching process has also been developed. The device characteristics and performance of the fully processed laser structures have been measured and analysed. The importance of the technological processes of QCL devices will be discussed, in particular the influence of growth and material parameters and processing on the device characteristics and performance.

[1] D. Hofstetter et. al., APL 78, 396 (2001).

Supported by DFG in the framework of the FOR394.