Dresden 2003 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 11: SiC I
HL 11.5: Vortrag
Montag, 24. März 2003, 16:15–16:30, BEY/154
Hydrogen saturated a-planes of 4H-SiC studied by LEED, SXPS, and FTIR-ATR — •Th. Seyller1, L. Ley1, A. Taddich2, J.D. Riley2, and R.G.C. Leckey2 — 1Institut für Technische Physik, Lehrstuhl für Experimentalphysik, Universität Erlangen-Nürnberg, Germany — 2Department of Physics, La Trobe University, Australia
We have characterized the non-polar a-planes of 4H-SiC, i.e. 4H-SiC(1120) and (1100) surfaces, by low-energy electron diffraction (LEED), surface sensitive photoelectron spectroscopy using synchrotron radiation (SXPS) and Fourier-transform infrared absorption spectroscopy (FTIR) in attenuated total reflection mode (ATR). Hydrogenation was carried out by thermal treatment in ultrapure hydrogen [1], leading to surfaces with (1×1) periodicity. The C1s core level spectra show a hydrogen induced chemically shifted component in good agreement with 6H-SiC(0001)-(1×1):H surface [2] indicating the presence of Si3C-H entities at the surface. C3Si-H entities can be identified by absorption bands due to Si-H stretch modes. Based on these spectroscopic findings we will present structural models for the hydrogen saturated a-planes of 4H-SiC.
[1] N. Sieber, B. F. Mantel, Th. Seyller, J. Ristein, L. Ley, T. Heller, D. R. Batchelor, and D. Schmeisser, Appl. Phys. Lett. 78 (2001) 1216.
[2] N. Sieber, Th. Seyller, L. Ley, M. Polcik, D. James, J.D. Riley, R.G.C. Leckey, Mater. Sci. Forum 389-393 (2002) 713.