Dresden 2003 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 14: Poster I
HL 14.28: Poster
Montag, 24. März 2003, 17:00–19:30, HSZ/P2
Pulsed laser deposition of high quality epitaxial ZnO, (Mg, Cd) x Zn 1−x O, and ZnO:(Ga, Al) thin films on c-, a-, and r-plane sapphire — •Michael Lorenz1, Evgeni M. Kaidashev1,2, Holger Hochmuth1, Daniel Spemann1, Volker Riede1, Carsten Bundesmann1, Holger von Wenckstern1, Andreas Rahm1, Gabriele Benndorf1, and Marius Grundmann1 — 1Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, D-04103 Leipzig, Germany — 2Rostov-on-Don State University, Mechanics and Applied Mathematics Research Institute, 344090 Rostov-on-Don, Russia
High-quality epitaxial, n-type conducting ZnO thin films, nominally undoped, doped with Ga or Al, or alloyed with Mg or Cd, were grown by pulsed laser deposition (PLD) on c-, a-, and r-plane sapphire substrates, and characterized by RHEED, RBS, UV/VIS optical transmission and Hall measurement. The optical band gap of undoped ZnO films at nearly 3.28 eV was shifted by alloying with Mg up to 4.5 eV and by alloying with Cd down to 3.18 eV. The Hall transport data of the PLD (Mg,Zn,Cd)O:(Ga,Al) thin films span a carrier concentration range of six orders of magnitude from 3 x 10 14 to 3 x 10 20 cm −3 . Nominally undoped ZnO films grown with low-temperature ZnO nucleation layers reached state of the art electron mobilities up to 155 cm 2 /Vs at 300 K.
The results demonstrate the unique tunability of the optical and electrical properties of PLD grown ZnO-based thin films for future electronic devices. Supported by the BMBF within Wachstumskern INNOCIS FKZ 03WKI09.