Dresden 2003 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 14: Poster I
HL 14.40: Poster
Montag, 24. März 2003, 17:00–19:30, HSZ/P2
Determination of doping profile in δ - doped layers by micro-Raman spectroscopy on beveled samples — •R. Srnanek1, M. Lentze2, J. Geurts2, P. Kordos3, A. Förster3, B. Sciana4, D. Radziewicz4, and M. Tlaczala4 — 1Microelectronics Department, Slovak University of Technology, Ilkovicova 3, 81219 Bratislava, Slovakia — 2Physikalisches Institut der Universität Würzburg, EP III, Am Hubland, D-97074 Würzburg — 3Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich — 4Faculty of Microsystem Electronics and Photonics, Wroclaw University of technology, 50327 Wroclaw, Poland
Delta doped semiconductors are very promising materials for the fabrication of novel opto- and micro-electronic devices. We report a procedure for the direct estimation of the doping spike location and the profile in Si - doped GaAs layers using micro-Raman spectroscopy on beveled structures. The structures were grown by MBE and MOVPE with target sheet doping density between 2 and 5 × 1012 cm−2 . The bevels were prepared by wet chemical etching in H3PO4 : H2O2 : H2O. The bevel angles were in the range 10−4 rad. A 514.5 nm line of Ar+-ion laser was used for excitation. While canning the laser spot along the bevel, the transversal optical (TO) and the longitudinal optical (LO) phonon were recorded. For obtaining of the values of doping concentration the TO/LO intensity ratio was compared with that of beveled calibration structures with different Si-doping concentrations. The results are in good agreement with those mesured by SIMS and micro-Photoluminescence.